smd t ype mosfet s d g a p 2 3 1 0 g n %? f e a t u r e s %? s i m p l e d r i v e r e q u i r e m e n t %? s m a l l p a c k a g e o u t l i n e %? s u r f a c e m o u n t d e v i c e %? a b s o l u t e m a x i m u m r a t i n g s t a = 2 5 ! p a r a m e t e r s y m b o l r a t i n g u n i t d r a i n - s o u r c e v o l t a g e v d s 6 0 v g a t e - s o u r c e v o l t a g e v g s 2 0 v c o n t i n u o u s d r a i n c u r r e n t t a = 2 5 ! 3 t a = 7 0 ! 2 . 3 p u l s e d d r a i n c u r r e n t * i d m 1 0 p o w e r d i s s i p a t i o n t a = 2 5 ! p d 1 . 3 8 w l i n e a r d e r a t i n g f a c t o r 0 . 0 1 w / ! t h e r m a l r e s i s t a n c e . j u n c t i o n - t o - a m b i e n t r t h j a 9 0 ! / w j u n c t i o n a n d s t o r a g e t e m p e r a t u r e r a n g e t j , t s t g - 5 5 t o 1 5 0 ! * 2 . p u l s e w i d t h "d 3 0 0 u s , d u t y c y c l e "d 2 % . i d a 1.gate 2.soruce 3.drai n 0.4 +0.1 -0.05 2.9 +0.2 -0.2 0.95 +0.1 -0.1 1.9 +0.2 -0.2 2.8 +0.2 -0.2 +0.2 -0.1 0-0.1 0.38 +0.1 -0.1 1.1 +0.2 -0.1 0.55 0.4 12 3 unit: mm sot-23-3 0.1 +0.05 -0.01 1.6 smd type ic mosfet dip type smd type ic mosfet dip type product specification 4008-318-123 sales@twtysemi.com 1 of 4 http://www.twtysemi.com
smd t ype mosfet %? e l e c t r i c a l c h a r a c t e r i s t i c s t a = 2 5 ! p a r a m e t e r s y m b o l t e s t c o n d i t o n s m i n t y p m a x u n i t d r a i n - s o u r c e b r e a k d o w n v o l t a g e v d s s i d = 2 5 0? a , v g s = 0 v 6 0 v v d s = 6 0 v , v g s = 0 v 1 0 v d s = 4 8 , v g s = 0 v , t j = 7 0 ! 2 5 g a t e - b o d y l e a k a g e c u r r e n t i g s s v d s = 0 v , v g s = 2 0 v 1 0 0 n a g a t e t h r e s h o l d v o l t a g e v g s ( t h ) v d s = v g s i d = - 2 5 0? a 1 3 v v g s = 1 0 v , i d = 3 a 9 0 v g s = 4 . 5 v , i d = 2 a 1 2 0 f o r w a r d t r a n s c o n d u c t a n c e g f s v d s = 5 v , i d = 3 a 5 s i n p u t c a p a c i t a n c e c i s s 4 9 0 7 8 0 o u t p u t c a p a c i t a n c e c o s s 5 5 r e v e r s e t r a n s f e r c a p a c i t a n c e c r s s 4 0 t o t a l g a t e c h a r g e q g 6 1 0 g a t e s o u r c e c h a r g e q g s 1 . 6 g a t e d r a i n c h a r g e q g d 3 t u r n - o n d e l a y t i m e t d ( o n ) 6 t u r n - o n r i s e t i m e t r 5 t u r n - o f f d e l a y t i m e t d ( o f f ) 1 6 t u r n - o f f f a l l t i m e t f 3 b o d y d i o d e r e v e r s e r e c o v e r y t i m e t r r i s = 3 a , d i / d t = 1 0 0 a /? s 2 5 b o d y d i o d e r e v e r s e r e c o v e r y c h a r g e q r r i s = 3 a , d i / d t = 1 0 0 a / ? s 2 6 n c d i o d e f o r w a r d v o l t a g e v s d i s = 1 . 2 a , v g s = 0 v 1 . 2 v n s v g s = 1 0 v , v d s = 3 0 v , i d = 1 a r d = 3 0 ? , r g e n = 3 . 3 ? r d s ( o n ) s t a t i c d r a i n - s o u r c e o n - r e s i s t a n c e i d s s z e r o g a t e v o l t a g e d r a i n c u r r e n t ? a m ? v g s = 0 v , v d s = 2 5 v , f = 1 m h z v d s = 4 8 v , i d = 3 a , v g s = 4 . 5 v p f n c smd t ype a p 2 3 1 0 g n smd type ic dip type smd type ic dip type product specification 4008-318-123 sales@twtysemi.com 2 of 4 http://www.twtysemi.com
fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 0 2 4 6 8 10 012345 v ds , drain-to-source voltage (v) i d , drain current (a) t a =25 o c 10v 7.0v 5.0v 4.5v v g = 3.0 v 0 2 4 6 8 10 012345 v ds , drain-to-source voltage (v) i d , drain current (a) t a = 150 o c 10v 7.0v 5.0v 4.5v v g = 3.0 v 75 81 87 93 99 105 246810 v gs , gate-to-source voltage (v) r ds(on) (m ) i d =2a t a =25 o c 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =3a v g =10v 0 1 2 3 0 0.2 0.4 0.6 0.8 1 1.2 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 0.4 0.6 0.8 1.0 1.2 1.4 -50 0 50 100 150 t j , junction temperature ( o c) normalized v gs(th) (v) smd t ype mosfet smd t ype a p 2 3 1 0 g n smd type ic dip type smd type ic dip type product specification 4008-318-123 sales@twtysemi.com 3 of 4 http://www.twtysemi.com
fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance 0 2 4 6 8 10 12 14 03691215 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =3a v ds =30v v ds =38v v ds =48v 10 100 1000 1 5 9 1317212529 v ds , drain-to-source voltage (v) c (pf) f =1.0mhz c iss c oss c rss 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r thja ) 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse p dm duty factor = t/t peak t j = p dm x r thja + t a r thja = 270 /w t t 0.001 0.010 0.100 1.000 10.000 100.000 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) i d (a) t a =25 o c single pulse 100us 1ms 10ms 100ms 1s dc smd t ype a p 2 3 1 0 g n smd type ic dip type smd type ic dip type product specification 4008-318-123 sales@twtysemi.com 4 of 4 http://www.twtysemi.com
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